SMG5409 MOSFET Transistor

The SMG5409 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SMG5409 transistor as follows.

SMG5409 Transistor Specification

Transistor Code		SMG5409
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC59
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		91pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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