SMG2359P MOSFET Transistor

The SMG2359P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SMG2359P transistor as follows.

SMG2359P Transistor Specification

Transistor Code		SMG2359P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC59
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.381Ohm
Power Dissipation (Maximum)	PD	1.3W
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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