SMG2358N MOSFET Transistor

The SMG2358N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SMG2358N transistor as follows.

SMG2358N Transistor Specification

Transistor Code		SMG2358N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC59
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.092Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		31pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS

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