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SMG2327P MOSFET Transistor

The SMG2327P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SMG2327P transistor as follows.

Circuit diagram symbol of the SMG2327P transistor

SMG2327P Transistor Specification

Transistor Code SMG2327P
Transistor Type MOSFET
Control Channel Type P-Channel
Package SC59
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.052Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 130pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS

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