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SMG2318N MOSFET Transistor

The SMG2318N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SMG2318N transistor as follows.

Circuit diagram symbol of the SMG2318N transistor

SMG2318N Transistor Specification

Transistor Code SMG2318N
Transistor Type MOSFET
Control Channel Type N-Channel
Package SC59
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.25Ohm
Power Dissipation (Maximum) PD 0.8W
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS

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