SMG2314N MOSFET Transistor

The SMG2314N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SMG2314N transistor as follows.

SMG2314N Transistor Specification

Transistor Code		SMG2314N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC59
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	1.3W
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS

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