SMG1330N MOSFET Transistor

The SMG1330N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SMG1330N transistor as follows.

SMG1330N Transistor Specification

Transistor Code		SMG1330N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC59
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.058Ohm
Power Dissipation (Maximum)	PD	0.34W
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS

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