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SM9998DSQG MOSFET Transistor

The SM9998DSQG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM9998DSQG transistor as follows.

Circuit diagram symbol of the SM9998DSQG transistor

SM9998DSQG Transistor Specification

Transistor Code SM9998DSQG
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN2X3A-6
Transistor SMD Code 9998*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 9.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0075Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 1920pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS

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