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SM9992DSQG MOSFET Transistor

The SM9992DSQG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM9992DSQG transistor as follows.

Circuit diagram symbol of the SM9992DSQG transistor

SM9992DSQG Transistor Specification

Transistor Code SM9992DSQG
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN2X5B-6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0081Ohm
Power Dissipation (Maximum) PD 3.5W
Drain-Source Capacitance 370pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 16nS

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