SM7A23NSUB MOSFET Transistor

The SM7A23NSUB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM7A23NSUB transistor as follows.

SM7A23NSUB Transistor Specification

Transistor Code		SM7A23NSUB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	700V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	89W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.5nS

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