SM6A25NSUB MOSFET Transistor

The SM6A25NSUB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM6A25NSUB transistor as follows.

SM6A25NSUB Transistor Specification

Transistor Code		SM6A25NSUB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.36Ohm
Power Dissipation (Maximum)	PD	113W
Drain-Source Capacitance		720pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS

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