SM6A23NSUB MOSFET Transistor

The SM6A23NSUB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM6A23NSUB transistor as follows.

SM6A23NSUB Transistor Specification

Transistor Code		SM6A23NSUB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.86Ohm
Power Dissipation (Maximum)	PD	86W
Drain-Source Capacitance		385pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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