SM6019NSU MOSFET Transistor

The SM6019NSU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM6019NSU transistor as follows.

SM6019NSU Transistor Specification

Transistor Code		SM6019NSU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	46A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0115Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		245pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS

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