SM6018NSUB MOSFET Transistor

The SM6018NSUB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM6018NSUB transistor as follows.

SM6018NSUB Transistor Specification

Transistor Code		SM6018NSUB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS

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