SM6012NSUB MOSFET Transistor

The SM6012NSUB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM6012NSUB transistor as follows.

SM6012NSUB Transistor Specification

Transistor Code		SM6012NSUB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	41A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0195Ohm
Power Dissipation (Maximum)	PD	59.5W
Drain-Source Capacitance		135pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS

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