SM3319NSQG MOSFET Transistor

The SM3319NSQG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM3319NSQG transistor as follows.

SM3319NSQG Transistor Specification

Transistor Code		SM3319NSQG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3D-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.021Ohm
Power Dissipation (Maximum)	PD	17.8W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS

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