SM3319NAQG MOSFET Transistor

The SM3319NAQG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM3319NAQG transistor as follows.

SM3319NAQG Transistor Specification

Transistor Code		SM3319NAQG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3D-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	12.5W
Drain-Source Capacitance		57pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.5nS

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