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SM3307PSQG MOSFET Transistor

The SM3307PSQG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM3307PSQG transistor as follows.

Circuit diagram symbol of the SM3307PSQG transistor

SM3307PSQG Transistor Specification

Transistor Code SM3307PSQG
Transistor Type MOSFET
Control Channel Type P-Channel
Package DFN3X3-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.018Ohm
Power Dissipation (Maximum) PD 3.1W
Drain-Source Capacitance 210pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 21nC

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