SM2319PSAN MOSFET Transistor

The SM2319PSAN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM2319PSAN transistor as follows.

SM2319PSAN Transistor Specification

Transistor Code		SM2319PSAN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23N
Transistor SMD Code		B19*
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		58pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS

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