SM2217PSQG MOSFET Transistor

The SM2217PSQG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM2217PSQG transistor as follows.

SM2217PSQG Transistor Specification

Transistor Code		SM2217PSQG
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2X2A-6
Transistor SMD Code		2217B
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	9.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		294pF
Operating Junction Temperature (Maximum)		150°C

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