SM1F02NSU MOSFET Transistor

The SM1F02NSU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM1F02NSU transistor as follows.

SM1F02NSU Transistor Specification

Transistor Code		SM1F02NSU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252-3
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.046Ohm
Power Dissipation (Maximum)	PD	113W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		40nC

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