SM1A25NSUB MOSFET Transistor

The SM1A25NSUB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM1A25NSUB transistor as follows.

SM1A25NSUB Transistor Specification

Transistor Code		SM1A25NSUB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.162Ohm
Power Dissipation (Maximum)	PD	29W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS

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