SM1A18NSQG MOSFET Transistor

The SM1A18NSQG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM1A18NSQG transistor as follows.

SM1A18NSQG Transistor Specification

Transistor Code		SM1A18NSQG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3D-8
Transistor SMD Code		1A18
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	17.8W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS

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