SM1A12DSK MOSFET Transistor

The SM1A12DSK is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM1A12DSK transistor as follows.

SM1A12DSK Transistor Specification

Transistor Code		SM1A12DSK
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.101Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		20nC

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