SM1A10NSU MOSFET Transistor

The SM1A10NSU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM1A10NSU transistor as follows.

SM1A10NSU Transistor Specification

Transistor Code		SM1A10NSU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252-3
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.175Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		9.5nC

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