SM1A06NSU MOSFET Transistor

The SM1A06NSU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM1A06NSU transistor as follows.

SM1A06NSU Transistor Specification

Transistor Code		SM1A06NSU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	113W
Drain-Source Capacitance		255pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS

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