SIR422DP MOSFET Transistor

The SIR422DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIR422DP transistor as follows.

SIR422DP Transistor Specification

Transistor Code		SIR422DP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	34.7W
Drain-Source Capacitance		264pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		145nS
Gate-Threshold Voltage (Maximum)		2.5V

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