SIR164DP MOSFET Transistor

The SIR164DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIR164DP transistor as follows.

SIR164DP Transistor Specification

Transistor Code		SIR164DP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0032Ohm
Power Dissipation (Maximum)	PD	69W
Drain-Source Capacitance		740pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		41nS
Gate-Threshold Voltage (Maximum)		2.5V

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