SIHU3N50D MOSFET Transistor

The SIHU3N50D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHU3N50D transistor as follows.

SIHU3N50D Transistor Specification

Transistor Code		SIHU3N50D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.2Ohm
Power Dissipation (Maximum)	PD	104W
Drain-Source Capacitance		21pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		6nC

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