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SIHP5N50D MOSFET Transistor

The SIHP5N50D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHP5N50D transistor as follows.

Circuit diagram symbol of the SIHP5N50D transistor

SIHP5N50D Transistor Specification

Transistor Code SIHP5N50D
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 104W
Drain-Source Capacitance 34pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 10nC

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