SIHP33N60EF MOSFET Transistor

The SIHP33N60EF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHP33N60EF transistor as follows.

SIHP33N60EF Transistor Specification

Transistor Code		SIHP33N60EF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.098Ohm
Power Dissipation (Maximum)	PD	278W
Drain-Source Capacitance		154pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		43nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		103nC

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