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SIHP30N60E MOSFET Transistor

The SIHP30N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHP30N60E transistor as follows.

Circuit diagram symbol of the SIHP30N60E transistor

SIHP30N60E Transistor Specification

Transistor Code SIHP30N60E
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 29A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.125Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 138pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 85nC

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