SIHP24N65E MOSFET Transistor

The SIHP24N65E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHP24N65E transistor as follows.

SIHP24N65E Transistor Specification

Transistor Code		SIHP24N65E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.145Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		122pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		84nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		81nC

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