SIHP17N60D MOSFET Transistor

The SIHP17N60D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHP17N60D transistor as follows.

SIHP17N60D Transistor Specification

Transistor Code		SIHP17N60D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.34Ohm
Power Dissipation (Maximum)	PD	277.8W
Drain-Source Capacitance		140pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		56nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		45nC

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