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SIHLD110 MOSFET Transistor

The SIHLD110 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHLD110 transistor as follows.

Circuit diagram symbol of the SIHLD110 transistor

SIHLD110 Transistor Specification

Transistor Code SIHLD110
Transistor Type MOSFET
Control Channel Type N-Channel
Package HVMDIP
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.54Ohm
Power Dissipation (Maximum) PD 1.3W
Drain-Source Capacitance 80pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 4.7nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 6.1nC

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