SIHL640 MOSFET Transistor

The SIHL640 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHL640 transistor as follows.

SIHL640 Transistor Specification

Transistor Code		SIHL640
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		400pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		83nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		66nC

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