SIHL510S MOSFET Transistor

The SIHL510S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHL510S transistor as follows.

SIHL510S Transistor Specification

Transistor Code		SIHL510S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	5.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.54Ohm
Power Dissipation (Maximum)	PD	43W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		47nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		6.1nC

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