The SIHH11N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the SIHH11N60E transistor as follows.
| Transistor Code | SIHH11N60E | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | POWERPAK8X8 | |
| Drain-Source Voltage (Maximum) | VDS | 600V |
| Gate-Source Voltage (Maximum) | VGS | 30V |
| Drain Current (Maximum) | ID | 11A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.339Ohm |
| Power Dissipation (Maximum) | PD | 114W |
| Drain-Source Capacitance | 56pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 21nS | |
| Gate-Threshold Voltage (Maximum) | 4V | |
| Total Gate Charge | 31nC | |
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