SIHG64N65E MOSFET Transistor

The SIHG64N65E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHG64N65E transistor as follows.

SIHG64N65E Transistor Specification

Transistor Code		SIHG64N65E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AC
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	64A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.047Ohm
Power Dissipation (Maximum)	PD	520W
Drain-Source Capacitance		366pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		122nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		239nC

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