SIHG25N40D MOSFET Transistor

The SIHG25N40D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHG25N40D transistor as follows.

SIHG25N40D Transistor Specification

Transistor Code		SIHG25N40D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AC
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	278W
Drain-Source Capacitance		177pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		57nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		44nC

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