SIHG22N50D MOSFET Transistor

The SIHG22N50D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHG22N50D transistor as follows.

SIHG22N50D Transistor Specification

Transistor Code		SIHG22N50D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AC
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	312W
Drain-Source Capacitance		169pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		42nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		49nC

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