SIHFU9012 MOSFET Transistor

The SIHFU9012 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFU9012 transistor as follows.

SIHFU9012 Transistor Specification

Transistor Code		SIHFU9012
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		47nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		6.1nC

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