SIHFU1N60A MOSFET Transistor

The SIHFU1N60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFU1N60A transistor as follows.

SIHFU1N60A Transistor Specification

Transistor Code		SIHFU1N60A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7Ohm
Power Dissipation (Maximum)	PD	36W
Drain-Source Capacitance		32.6pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		14nC

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