SIHFP26N60L MOSFET Transistor

The SIHFP26N60L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFP26N60L transistor as follows.

SIHFP26N60L Transistor Specification

Transistor Code		SIHFP26N60L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AC
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	470W
Drain-Source Capacitance		450pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		180nC

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