SIHFP250 MOSFET Transistor

The SIHFP250 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFP250 transistor as follows.

SIHFP250 Transistor Specification

Transistor Code		SIHFP250
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AC
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	190W
Drain-Source Capacitance		780pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		86nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		140nC

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