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SIHFP22N60K MOSFET Transistor

The SIHFP22N60K is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFP22N60K transistor as follows.

Circuit diagram symbol of the SIHFP22N60K transistor

SIHFP22N60K Transistor Specification

Transistor Code SIHFP22N60K
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247AC
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 22A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.28Ohm
Power Dissipation (Maximum) PD 370W
Drain-Source Capacitance 350pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 99nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 150nC

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