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SIHFP21N60L MOSFET Transistor

The SIHFP21N60L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFP21N60L transistor as follows.

Circuit diagram symbol of the SIHFP21N60L transistor

SIHFP21N60L Transistor Specification

Transistor Code SIHFP21N60L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247AC
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 21A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.32Ohm
Power Dissipation (Maximum) PD 330W
Drain-Source Capacitance 340pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 58nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 150nC

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