SIHFL210 MOSFET Transistor

The SIHFL210 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFL210 transistor as follows.

SIHFL210 Transistor Specification

Transistor Code		SIHFL210
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.96A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		53pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.2nC

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