SIHFIB7N50A MOSFET Transistor

The SIHFIB7N50A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFIB7N50A transistor as follows.

SIHFIB7N50A Transistor Specification

Transistor Code		SIHFIB7N50A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220FP
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.52Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		208pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		52nC

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