SIHFI9Z14G MOSFET Transistor

The SIHFI9Z14G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFI9Z14G transistor as follows.

SIHFI9Z14G Transistor Specification

Transistor Code		SIHFI9Z14G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220FP
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	27W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		63nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		12nC

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